l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID R.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS55N06AQ3-G

CS55N10A3

CS55N10A4

CS55N10A8

CS55N10A8-G

CS55N10AQ3-G

CS55N25FA9R

CS55N50

CS55N53

CS5501

CS5503

CS5504

CS5505

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